## Abstract A turningβshifting technique is reported permitting the deposition of epitaxial layers at constant temperatures and with small melting volumes. Basic parameters of GaAs are studied and the development of crystal growth is followed up in dependence on temperature.
Liquid-phase epitaxy of Potassium Niobate
β Scribed by Dr. O. A. Khachaturyan; R. S. Madoyan
- Publisher
- John Wiley and Sons
- Year
- 1984
- Tongue
- English
- Weight
- 268 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0232-1300
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## Abstract This paper is concerned with the investigation of the peculiarities of the application of liquid phase epitaxy for obtaining multilayer structures with heterojunctions in the AlAsβGaAs system. Segregational depletion of Al in liquid and in solid phases is characteristic of this system.
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