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A steady-state procedure of liquid phase epitaxy

✍ Scribed by Dr. G. Kühn; Prof. Dr. H. Neels; H.-J. Höbler; D. Sutter

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
488 KB
Volume
10
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

A turning‐shifting technique is reported permitting the deposition of epitaxial layers at constant temperatures and with small melting volumes. Basic parameters of GaAs are studied and the development of crystal growth is followed up in dependence on temperature.

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