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Liquid phase epitaxial growth of GaAs from AuGeNi melts

✍ Scribed by M. Otsubo; H. Kumabe; H. Miki

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 382 KB
Volume: 20
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(77)90101-0

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Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR ## Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical con