The need for moderate and high dose implants at high energies has led to the use of r.f acceleration techniques for ion implantation. The Eaton NV-IO00 implanter is based on the independently phased r.f linear accelerator (linac), injected with a conventional 80 keV machine. The use of r.f acceleration allows NV-IO00 to produce beams in excess of 500 f~A over a wide range of ion species. The final beam energy is 1 MeV for singly charged ions. The injection of multiply charged ions results in proportionally higher energy beams with no charge state contamination.
A number of design changes have been incorporated into several new machines based on the NV-1000. The three new models, NV-1001, NV-1002 and NV-IO03, differ in the number of r.f acceleration sections, and therefore final energy. These implanters have been designed to take advantage of the high beam current limits of the r.f linac. The NV-IO02 will provide beam currents up to 2 mA, with final energies of l.4 MeV for singly charged ions. A test bed has been constructed for the new design. Results indicate that the design specifications for the individual components will be met or exceeded.
As a result of several technical changes, the NV-1002 series of implanters will be much more *Paper presented at the Symposium on Deep Implants: Fundamentals and Applications at the E-MRS Spring Meeting, Strasbourg, May 31-June 2, 1988.
compact than the NV-1000. The Eaton advanced control system and robot-based end station will be incorporated into the three models of the new series.