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Limits to Doping of Wide Band Gap Semiconductors

โœ Scribed by Walsh, Aron; Buckeridge, John; Catlow, C. Richard A.; Jackson, Adam J.; Keal, Thomas W.; Miskufova, Martina; Sherwood, Paul; Shevlin, Stephen A.; Watkins, Mathew B.; Woodley, Scott M.; Sokol, Alexey A.


Book ID
120622122
Publisher
American Chemical Society
Year
2013
Tongue
English
Weight
309 KB
Volume
25
Category
Article
ISSN
0897-4756

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Both ion implantation and epitaxial crystal growth provide convenient methods of introducing transition metals such as Mn,Cr,Fe,Ni and Co into GaN, GaP, SiC and ZnO for creating dilute magnetic semiconductors exhibiting room temperature ferromagnetism. In this paper we review progress in wide band g