β Scribed by Andrew S Brown; Martin A Green; Richard P Corkish
No coin nor oath required. For personal study only.
Multi-band solar cells provide a possible approach to obtain photovoltaic e ciencies that are greater than that of a single junction solar cell. In the three-band case, an intermediate band harnesses photons of energy less than that between the two main bands, allowing these photons to contribute to the power output of the device. Previous work has shown that introducing a third band o ers an e ciency of 63.2%. This paper extends the theory to four bands and calculates a limiting e ciency of 71.7%. Finite bandwidths of all bands can be used to ensure photon absorption selectivity, assumed in deducing the previous limits, but at the cost of reduced limiting e ciency. The maximum e ciency using this feature for the three and four bands is 58.9% and 59.0%, respectively. Superlattices and quantum dots o er exibility in artiΓΏcially designing the energy and widths of the bands.
π SIMILAR VOLUMES
InAIAs/InGaAs solar cells on InP for a low-band-gap cell have been fabricated. From theoretical simulation it is expected that the optimized InAIAs/InGaAs cell should have photovoltaic characteristic values of Jsc = 21.2 mA cm -2, Voc = 0.345 V, FF = 0.745 and r/= 4.02% at one sun AM0 without an AR-
Photovoltaic characteristics of low-band-gap cells for a high efficiency multi-structure solar cell system are calculated using a precise modeling of the absorption coefficient for direct and indirect transitions in the absorption and window layers. Taking the AlGaAs/GaAs cell as the intermediate-ba
The aim of this paper is to show how to compute the wave function of the ground state of a quantum mechanical system from the Euclidean path integral. The method is sufliciently general to encompass the case of degenerate classical minima, as well as the case of multidimensional systems. In the oned