✍ Scribed by R. Brüggemann; G.H. Bauer
No coin nor oath required. For personal study only.
On the basis of the ideal-diode model it is straightforward to exploit photo-and electroluminescence results from silicon solar cells. The value of the quasi-Fermi level splitting deduced from experimental luminescence data can be related to the applied voltage under the assumption of homogeneous carrier distributions. We show from numerical simulation and Shockley-diode analysis that in real solar cells discrepancies may exist between the quasi-Fermi level splitting determined from the photoluminescence radiation, which reflects the carrier distributions in the volume of the device, and the applied voltage. Implications are detailed for the construction of current-voltage characteristics from luminescence analysis.
📜 SIMILAR VOLUMES
Calculations of the limiting eciency of silicon solar cells generally treat surface recombination as an extrinsic parameter which can be made arbitrarily small. In the present paper, modi®cations to these limits for both bulk and thin ®lm silicon solar cells are calculated for the case of ®nite surf