Thin-ยฎlm amorphous silicon alloy technology has emerged as a strong contender for providing low-cost photovoltaic products to meet the energy needs of the 21st century. World record 14 . 6% initial and 13 . 0% stable active-area conversion eciencies have been achieved for small-area solar cells in o
Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination
โ Scribed by Martin A. Green
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 91 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1062-7995
No coin nor oath required. For personal study only.
โฆ Synopsis
Calculations of the limiting eciency of silicon solar cells generally treat surface recombination as an extrinsic parameter which can be made arbitrarily small. In the present paper, modiยฎcations to these limits for both bulk and thin ยฎlm silicon solar cells are calculated for the case of ยฎnite surface recombination velocity characterized in terms of the voltage limit imposed by these recombination processes. Based on the best experimental levels of surface passivation yet demonstrated, the limiting eciency for a 1 m m m m mm thick silicon cell is shown to be 19 . 8%, while that for a 400 m m m m mm thick cell is 26 . 2%, both under standard test conditions.
๐ SIMILAR VOLUMES
This contribution is a summary of an international, interdisciplinary workshop dedicated to defects in chalcopyrite semiconductors and their relation to the device characteristics of thin-ยฎlm solar cells, held on 3ยฑ5 June 1996 in Oberstdorf, Germany. Results of dierent characterization methods were