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LiInSe2 thin epitaxial films on {111} a-oriented GaAs

✍ Scribed by A. Tempel; B. Schumann; S. Mitaray; G. Kühn


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
287 KB
Volume
101
Category
Article
ISSN
0040-6090

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Growth and electrical properties of epit
✍ Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. D. Peters; Dr. A. Tempel; 📂 Article 📅 1979 🏛 John Wiley and Sons 🌐 English ⚖ 872 KB

A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87