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Light‐emitting mechanism of ZnTeCdS heterojunction diodes

✍ Scribed by Ota, Tadahisa; Kobayashi, Kikuo; Takahashi, Kiyoshi

Book ID
118268106
Publisher
American Institute of Physics
Year
1974
Tongue
English
Weight
667 KB
Volume
45
Category
Article
ISSN
0021-8979

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati