𝔖 Bobbio Scriptorium
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Light-emitting diode of ZnTeCdS heterojunctions

✍ Scribed by T. Ota; K. Kobayashi; K. Takahashi

Book ID
107856008
Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
145 KB
Volume
15
Category
Article
ISSN
0038-1101

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati