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Light-intensity dependence of excess carrier lifetimes

✍ Scribed by G.J. Adriaenssens; S.D. Baranovskii; W. Fuhs; J. Jansen; Ö. Öktü

Book ID
115990900
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
422 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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## Abstract Time‐resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10^18^ to 10^19^ cm^–3^. The observed decay time at 20 K is well explained by a dominating radiative interban