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Light-induced defect creation under intense optical excitation in hydrogenated amorphous silicon

✍ Scribed by K Morigaki; H Hikita


Book ID
117145483
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
83 KB
Volume
299-302
Category
Article
ISSN
0022-3093

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Recombination processes and light-induce
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## Abstract Recombination processes of electrons and holes in hydrogenated amorphous silison (a‐Si:H) are reviewed in terms of our model. The long decay component of photoluminescence (PL) and the long decay of light‐induced electron spin resonance (LESR) are compared, and it is concluded that radi