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Bias light induced defect relaxation phenomena in hydrogenated amorphous silicon

✍ Scribed by J.David Cohen; Fan Zhong


Book ID
115990927
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
433 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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## Abstract Recombination processes of electrons and holes in hydrogenated amorphous silison (a‐Si:H) are reviewed in terms of our model. The long decay component of photoluminescence (PL) and the long decay of light‐induced electron spin resonance (LESR) are compared, and it is concluded that radi