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Light-emitting structures based on nanocrystalline (Si/CaF2) multiquantum wells

โœ Scribed by A.G. Nassiopoulou; V. Tsakiri; V. Ioannou-Sougleridis; P. Photopoulos; S. Menard; F. Bassani; F. Arnaud d' Avitaya


Book ID
108344801
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
194 KB
Volume
80
Category
Article
ISSN
0022-2313

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Light emitting devices based on nanocrys
โœ M. Wang; A. Anopchenko; A. Marconi; E. Moser; S. Prezioso; L. Pavesi; G. Pucker; ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 323 KB

In this paper we report the visible-near-infrared light emission properties of nanocrystalline silicon (nc-Si) light emitting devices (LEDs) based on nc-Si/SiO 2 multilayer structures. Multilayer structures of silicon-rich oxide (SRO) and SiO 2 were grown by plasma enhanced chemical vapor deposition