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Lifetimes of Current Carriers in InP

✍ Scribed by G. G. Kovalevskaya; S. V. Slobodchikov

Publisher
John Wiley and Sons
Year
1968
Tongue
English
Weight
373 KB
Volume
30
Category
Article
ISSN
0370-1972

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## Abstract Time‐resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10^18^ to 10^19^ cm^–3^. The observed decay time at 20 K is well explained by a dominating radiative interban