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Lifetime measurements in Gd II and Gd III using time-resolved laser spectroscopy

✍ Scribed by Z.G. Zhang; A. Persson; Z.S. Li; S. Svanberg; Jiang Zhankui


Publisher
Springer
Year
2001
Tongue
English
Weight
116 KB
Volume
13
Category
Article
ISSN
1434-6060

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The rate constants for the reactions SiH,+02, SiH,+NO, and StH,+NO+N, have been measured over the pressure range I-10 Torr at 300 K, by monitoring a SiHl absorption line at 7 19.93 I cm ' using time-resolved diode laser spectroscopy. SiH3 radicals were prepared by pulsed CO2 laser photolysis of CClz