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Lattice strain relaxation in GaAsInP(001) and GaAsGaP(001) heterostructures

✍ Scribed by L. Francesio; P. Franzosi; G. Attolini; C. Pelosi


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
279 KB
Volume
97
Category
Article
ISSN
0038-1098

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Recent developments in relaxed and strai
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The fabrication of novel optoelectronic devices and integrated circuits requires more ways of combining different materials. In this paper we will briefly review recent developments in the realization of relaxed and strained lattice mismatched heterostructures, with emphasis on GaAs and InP based ma