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Lattice relaxation around impurity atoms in semiconductors – arsenic in silicon – a comparison between experiment and theory

✍ Scribed by V Koteski; N Ivanovic; H Haas; E Holub-Krappe; H.-E Mahnke


Book ID
114166382
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
110 KB
Volume
200
Category
Article
ISSN
0168-583X

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