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Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire

✍ Scribed by M Leszczynski; P Prystawko; T Suski; B Lucznik; J Domagala; J Bak-Misiuk; A Stonert; A Turos; R Langer; A Barski

Book ID
117625265
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
137 KB
Volume
286
Category
Article
ISSN
0925-8388

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✍ SΓ‘nchez-GarcΓ­a, M. A. ;Naranjo, F. B. ;Pau, J. L. ;JimΓ©nez, A. ;Calleja, E. ;MuΓ± πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 302 KB πŸ‘ 2 views

This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic