CuGe 2 P 3 is a p-type semiconductor with zincblende structure. Ge 3 P 4 is soluble up to 35 mole % in CuGe 2 P 3 . Lattice parameters of CuGe 2 P 3 + 0.2 Ge 3 P 4 have been determined at elevated temperatures from room temperature to 873 K using the x-ray diffraction profiles ( 111), ( 200), ( 220)
Lattice parameters of cadmium oxide at elevated temperatures
โ Scribed by H.P. Singh; B. Dayal
- Publisher
- Elsevier Science
- Year
- 1969
- Tongue
- English
- Weight
- 114 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0038-1098
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