Determination of lattice parameters and thermal expansion of CuGe2P3 + 0.2 Ge3P4 at elevated temperatures

✍ Scribed by G. Bhikshamaiah; S. Annapurna; A. K. Singh

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 103 KB
• Volume: 41
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200510694

✦ Synopsis

CuGe 2 P 3 is a p-type semiconductor with zincblende structure. Ge 3 P 4 is soluble up to 35 mole % in CuGe 2 P 3 . Lattice parameters of CuGe 2 P 3 + 0.2 Ge 3 P 4 have been determined at elevated temperatures from room temperature to 873 K using the x-ray diffraction profiles ( 111), ( 200), ( 220), ( 311), ( 222), ( 400), ( 331), ( 420), ( 422) and ( 511) obtained from high temperature diffractometer. It is found that the lattice parameter increases linearly from 0.53856 nm at RT to 0.54025 nm at 873 K. The data on lattice parameter is used and coefficient of lattice thermal expansion of CuGe 2 P 3 +0.2 Ge 3 P 4 was determined at different temperatures. It is found that the coefficient of thermal expansion of CuGe 2 P 3 +0.2 Ge 3 P 4 is 5.48 x 10 -6 K -1 and is independent of temperature.