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Lattice location of boron implanted into various metal crystals

✍ Scribed by K. Beck; B. Feuser; K. Kopitzki; G. Krauss; G. Mertler


Publisher
Elsevier Science
Year
1983
Weight
357 KB
Volume
209-210
Category
Article
ISSN
0167-5087

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The B lattice location in presence of a Si-self-interstitial (I Si ) supersaturation, controlled by energetic proton bombardment, has been studied by means of ion channelling and massive Monte Carlo simulations. B-doped layers of Si crystals with a B concentration of 1 Γ— 10 20 B/cm 3 were grown by M