Lattice deformation and interdiffusion of InAs quantum dots on GaAs(100)
โ Scribed by Matsumura, N.; Haga, T.; Muto, S.; Nakata, Y.; Yokoyama, N.
- Book ID
- 120450344
- Publisher
- American Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 388 KB
- Volume
- 89
- Category
- Article
- ISSN
- 0021-8979
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๐ SIMILAR VOLUMES
InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (ยน ) have been investigated. QDs were observed after deposition of 2ML (or 4ML ) of InAs on GaAs (100) (or (311)B) at ยน rangin
## Abstract We report on single dot spectroscopy of InAs/GaAs quantum dots grown by molecular beam epitaxy along the polar (211)B direction. Unlike the (001) dots, in the (211)B dots we have systematically observed large blue shifts of the biexciton lines with respect to the excitonic ones. This is