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Lateral-field-excited thin-film Lamb wave resonator

✍ Scribed by Bjurstrom, Johan; Katardjiev, Ilia; Yantchev, Ventsislav

Book ID
111885947
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
359 KB
Volume
86
Category
Article
ISSN
0003-6951

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## Abstract Currently, a high frequency device more than 3 GHz is required. High frequency resonators with resonant frequencies of 4.5 and 6.3 GHz were fabricated by utilizing an anti‐symmetric first mode (A~1~) of a Lamb wave having a high velocity consisting of a thin LiNbO~3~ film deposited by a