𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Lateral epitaxial growth of germanium on silicon oxide

✍ Scribed by Cammilleri, V. D.; Yam, V.; Fossard, F.; Renard, C.; Bouchier, D.; Fazzini, P. F.; Ortolani, L.; Houdellier, F.; Hÿtch, M.


Book ID
121649620
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
681 KB
Volume
93
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Epitaxial growth mode and silicon/silico
✍ J. M. Fernández; L. Hart; X. M. Zhang; M. H. Xie; J. Zhang; B. A. Joyce 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 483 KB

Silicon-germanium/silicon (Sil\_xGex/Si, x<0.50) multiple quantum wells (MQWs) have been grown on (00 1) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane (Si2Hs) and germane (GeH4) as source gases. Their structural properties have been evaluated by X-ray diffraction (XRD), r

Epitaxial growth of zinc oxide thin film
✍ Chunming Jin; Roger Narayan; Ashutosh Tiwari; Honghui Zhou; Alex Kvit; Jagdish N 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 273 KB

Epitaxial zinc oxide thin films were grown on Si(1 1 1) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following e