๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Lateral confinement of exciton states in GaAs/GaAlAs quantum wells grown on vicinal substrates

โœ Scribed by R. Grousson; V. Voliotis; P. Lavallard; C. Deparis

Book ID
105582808
Publisher
Italian Physical Society
Year
1995
Tongue
English
Weight
311 KB
Volume
17
Category
Article
ISSN
0392-6737

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Carriers escape mechanisms in shallow In
Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
โœ A. Tabata; S. Martini; A.A. Quivy; A.M. Ceschin; J.R. Leite ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 87 KB

We used photoluminescence spectroscopy in order to investigate the carriers escape mechanisms in In 0.15 Ga 0.85 As/GaAs quantum wells grown on top of nominal ( 001) and 2 โ€ข -, 4 โ€ข -and 6 โ€ข -off (001) towards (111)A GaAs substrates. We described the escape processes using two models that fit the Arr

Step-Bunching Evidence in Strained InxGa
Step-Bunching Evidence in Strained InxGa1?xAs/GaAs Quantum Wells Grown on Vicinal (001) Substrates
โœ de Sales, F.V. ;Soler, M.A.G. ;Ugarte, D. ;Quivy, A.A. ;da Silva, S.W. ;Martini, ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 117 KB ๐Ÿ‘ 2 views

In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol