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Lateral composition modulation in AlAs/InAs short period superlattices grown on InP(001)

โœ Scribed by Mirecki Millunchick, J.; Twesten, R. D.; Follstaedt, D. M.; Lee, S. R.; Jones, E. D.; Zhang, Yong; Ahrenkiel, S. P.; Mascarenhas, A.


Book ID
120825976
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
528 KB
Volume
70
Category
Article
ISSN
0003-6951

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InAs/GaAs short-period strained-layer su
โœ Man-Fang Huang; Elsa Garmire; Tom Hasenberg; Steffen Koehler ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 339 KB

Optical properties of two-dimensional transmission-type spatial light modulators using InAs/ GaAs short-period strained-layer superlattices (SPSLSs) in quantum wells, which operate near 960 nm, are investigated. The absorption characteristics of the individual pixels across a #200 pixellated wafer,