Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxy

✍ Scribed by Domen, K.; Kuramata, A.; Soejima, R.; Horino, K.; Kubota, S.; Tanahashi, T.

• Book ID: 117866175
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 146 KB
• Volume: 4
• Category: Article
• ISSN: 1077-260X
• DOI: 10.1109/2944.704106