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Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells

✍ Scribed by V. A. Gaisler; A. I. Toropov; A. K. Bakarov; A. K. Kalagin; N. T. Moshegov; D. A. Ténné; M. M. Kachanova; O. R. Kopp; L. A. Nenasheva; A. S. Medvedev

Book ID
110124113
Publisher
SP MAIK Nauka/Interperiodica
Year
1999
Tongue
English
Weight
67 KB
Volume
25
Category
Article
ISSN
1063-7850

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✍ D.H. Zhang; C.Y. Li 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 100 KB

We report an investigation of the interface quality of the Al 0.2 Ga 0.8 As/GaAs triple quantum wells (QWs) grown on the GaAs substrates 0 • and 6 • off (100) towards 111 A at a high CO environment, using the photoluminescence technique. The direct correlation between the quantum well quality and th