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In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers

โœ Scribed by G. Li; S. Yuan; H. H. Tan; X. Q. Liu; S. J. Chua; C. Jagadish


Book ID
107457762
Publisher
Springer US
Year
1998
Tongue
English
Weight
133 KB
Volume
27
Category
Article
ISSN
0361-5235

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Carbon incorporation in GaAs/Al0.2Ga0.8A
โœ D.H. Zhang; C.Y. Li ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 100 KB

We report an investigation of the interface quality of the Al 0.2 Ga 0.8 As/GaAs triple quantum wells (QWs) grown on the GaAs substrates 0 โ€ข and 6 โ€ข off (100) towards 111 A at a high CO environment, using the photoluminescence technique. The direct correlation between the quantum well quality and th