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Laser photochemical etching of silicon

✍ Scribed by S. Affrossman; R. T. Bailey; C. H. Cramer; F. R. Cruickshank; J. M. R. MacAllister; J. Alderman


Book ID
104842165
Publisher
Springer
Year
1989
Tongue
English
Weight
973 KB
Volume
49
Category
Article
ISSN
1432-0630

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## Abstract Photochemical etching of silicon assisted by two‐photon absorption (TPA) in the presence of hydrofluoric acid (HF) is demonstrated using a below‐bandgap femtosecond laser source. We investigate the morphology of the etched silicon as a function of the laser power, exposure time, as well