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Laser local oxidation of porous silicon: a FTIR spectroscopy investigation

✍ Scribed by Rocchia, M. ;Rossi, A. M. ;Borini, S. ;Boarino, L. ;Amato, G.

Book ID
105363175
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
193 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The local oxidation of porous silicon (PS), induced by a focused laser beam, could represent an alternative method for patterning PS through direct writing. Important phase changes take place on PS when irradiated by a focused laser beam and moreover a complete confinement of the oxidized areas can be achieved due to the very low thermal conductivity of PS. We present a detailed Fourier Transform InfraRed (FTIR) study of the irradiated areas to understand the degree of oxidation and the type of oxide obtained at different laser powers. An interpretation of the low wavenumber range, below 1300 cm^–1^, in terms of FrΓΆhlich interactions will be discussed. (Β© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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