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Laser irradiation of ion beam synthesized Ge nanocrystals in SiC

✍ Scribed by A. Hedler; S. Urban; T. Kups; U. Kaiser; W. Wesch


Book ID
113822785
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
495 KB
Volume
218
Category
Article
ISSN
0168-583X

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Structural characterization of Ge nanocr
✍ L.L. Araujo; R. Giulian; B. Johannessen; D.J. Llewellyn; P. Kluth; G. de M. Azev πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 406 KB

Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 Γ‚ 10 11 -2 Γ‚ 10 13 cm Γ€2 ) than previously reported. Size and depth distributions as well as structural disorder in the NCs were measured by RBS, TEM, SAX