๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Ion beam irradiation effects on Ge nanocrystals synthesized by using RF sputtering followed by RTA

โœ Scribed by Saikiran, V.; Srinivasa Rao, N.; Devaraju, G.; Chang, G.S.; Pathak, Anand P.


Book ID
121933754
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
821 KB
Volume
315
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Effect of crystallinity on the memory ef
โœ Y. Batra; D. Kabiraj; D. Kanjilal ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 241 KB

The effect of crystallinity of Ge nanocrystals on the charge storage properties of the metal oxide semiconductor (MOS) structure has been investigated. MOS structure with Ge nanocrystals embedded in the oxide has been fabricated by using atom beam sputtering technique. After annealing at 600 ยฐC in A