Ahstrati-The kinetics of the low temperature anodic oxidation of titanium silicide in KNO, solutions in ethylene glycol has been investigated as a function of the anodization current density. A strong influence of the anodic current density in the oxide composition, as determined by Rutherford backs
Laser-induced formation of titanium silicides
β Scribed by Chen, S. Y.; Shen, Z. X.; Chen, Z. D.; See, A. K.; Chan, L. H.; Zhang, T. J.; Tee, K. C.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 194 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0142-2421
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β¦ Synopsis
In this article, we report on the laser-induced formation of both C49 and C54 TiSi 2 films with fine grains using Q-switched Nd : YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro-Raman spectroscopy, high-resolution transmission electron microscopy, energy-dispersive spectrometry and atomic force microscopy. The TiSi 2 films synthesized are single-phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid-state reaction rather than liquid-phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology.
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hlultiphoton absorption processes and laser induced dielectnc breakdown studies of the reaction of SF6 and SFe/Hz mbturss have been carried out at a van&y of pressures and laser fluences\_ Formation of SF+. SOF4 and S02Fz can be shown to proceed via conventional, thermodynamically controlled reactio
A method is described for determining the heats of formation of highly stable metal silicides and data are given for the following compounds:-Ti& TiSi, TiSiz, Zr&, ZrSi, ZrSiz, ThSiz, V&i, Ta&, TaSi,, MoSiz, and WSi2. The highest heats of formation are those of compounds containing Group IVa metals