Laser-induced damage studies in GaAs

✍ Scribed by Amit Garg; Avinashi Kapoor; K.N. Tripathi

• Book ID: 104159765
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 112 KB
• Volume: 35
• Category: Article
• ISSN: 0030-3992
• DOI: 10.1016/s0030-3992(02)00118-4

✦ Synopsis

Laser-induced damage studies have been carried out on monocrystal GaAs at 1:06 m wavelength as a function of pulse repetition rate in the nanosecond regime. The single shot observed laser damage threshold is 0:9 J=cm 2 . It has been found that the damage threshold decreases when the sample is irradiated with large number of pulses. However, the above e ect is observed only when the repetition rate is higher than 1 Hz. Various laser damage mechanism theories have been discussed to explain the results.