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Laser-enhanced electron-ion capture and antihydrogen formation

✍ Scribed by Neumann, R. ;Poth, H. ;Winnacker, A. ;Wolf, A.


Book ID
105199154
Publisher
Springer
Year
1983
Tongue
English
Weight
744 KB
Volume
313
Category
Article
ISSN
1434-601X

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We have investigated a single crystal of the wide bandgap II-VI semiconductor ZnSe. The sample was highly resistive due to heavy compensation of this n-type semiconductor. In low transverse fields, clear signs of conversion from a paramagnetic to a diamagnetic fraction are observed, at about 60 K. T