Delayed electron capture and formation in ZnSe

✍ Scribed by R.C. Vilão; J.M. Gil; A. Weidinger; H.V. Alberto; J. Piroto Duarte; B.F.O. Costa; N. Ayres de Campos; R.L. Lichti; K.H. Chow; S.P. Cottrell; S.F.J. Cox

• Book ID: 103887121
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 223 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2008.11.144

✦ Synopsis

We have investigated a single crystal of the wide bandgap II-VI semiconductor ZnSe. The sample was highly resistive due to heavy compensation of this n-type semiconductor. In low transverse fields, clear signs of conversion from a paramagnetic to a diamagnetic fraction are observed, at about 60 K. The data are interpreted as delayed electron capture by paramagnetic muonium, forming the negatively charged state Mu À . The implications with respect to the electrical activity of muonium, and by analogy hydrogen, in this semiconductor are analyzed.