Laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO4/KTP Green laser with GaAs saturable absorber
โ Scribed by Guiqiu Li; Shengzhi Zhao; Kejian Yang; Jing Zou
- Book ID
- 114569993
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 179 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1077-260X
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A compact diode-pumped passively Q-switched intracavity frequency-doubled Nd:GdVO4=KTP green-pulse laser was demonstrated, using Cr 4+ :YAG as a saturable absorber in a simple at-at cavity. With a 5:9 W incident pump power, a passively Q-switched green laser was obtained with an average power of 397
Passive Q-switching of a laser-diode-pumped intracavity-frequency-doubling Nd:NYW/KTP laser has been realized with GaAs semiconductor saturable absorber. The dependence of pulse repetition rate, pulse energy, and pulse width on incident pump power are measured. The coupled rate equations are used to
A xenon ash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9:45 J. The dynamic laser has the highest slope e ciency when the GaAs wafer is