Large single crystals of gallium selenide: growing, doping by In and characterization

✍ Scribed by Valeriy G. Voevodin; Olga V. Voevodina; Svetlana A. Bereznaya; Zoya V. Korotchenko; Aleksander N. Morozov; Sergey Yu. Sarkisov; Nils C. Fernelius; Jonathan T. Goldstein

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 274 KB
• Volume: 26
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2003.09.014

✦ Synopsis

Gallium selenide is a material with great potential for nonlinear optical applications, due to its many attractive properties, including a broad low-loss transmittance (from 0.65 to 18 lm) and a large nonlinear coefficient. However, its current application is limited due to difficulties with its growth, and poor mechanical properties. Our current research has a threefold purpose. First, this work is intended to investigate the feasability of growing large, optical quality single crystal boules of GaSe; second, to investigate the impact of isovalent indium doping on the mechanical, electrophysical, and optical properties of GaSe, and third, to determine the concentration of In which is optimal for purposes of facilitating the practical implementation of GaSe in nonlinear devices.