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Large-signal microwave characteristics of resonant-tunneling high electron mobility transistors

โœ Scribed by Fukuyama, H.; Maezawa, K.; Yamamoto, M.; Okazaki, H.; Muraguchi, M.

Book ID
114537547
Publisher
IEEE
Year
1999
Tongue
English
Weight
228 KB
Volume
46
Category
Article
ISSN
0018-9383

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Experimental analysis of resonant tunnel
Experimental analysis of resonant tunneling transit time using high-frequency characteristics of resonant tunneling transistors
โœ Takao Waho; Steffen Koch; Takashi Mizutani ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 160 KB

We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for \(\mathrm{GaAs} /