We report on the fabrication and photoluminescence characterisation of n-type doped quantum wires, which are based on a modulation-doped \(\mathrm{GaAs} /(\mathrm{InGa}) \mathrm{As} /(\mathrm{AlGa}) \mathrm{As}\) quantum well structure, as used in inverted high electron mobility transistors. Lateral
✦ LIBER ✦
Large optical singularities of the one-dimensional electron gas in semiconductor quantum wires
✍ Scribed by J.M. Calleja; A.R. Goñi; B.S. Dennis; J.S. Weiner; A. Pinczuk; S. Schmitt-Rink; L.N. Pfeiffer; K.W. West; J.F. Müller; A.E. Ruckenstein
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 382 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0038-1098
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