Built-in fields in stacked InGaN/GaN qua
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Schulz, Stefan ;O'Reilly, Eoin P.
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Article
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2011
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John Wiley and Sons
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English
⚖ 411 KB
## Abstract The built‐in potential __ϕ__~tot~ of an isolated and of three stacked lens‐shaped __c__‐plane In~0.2~Ga~0.8~N/GaN quantum dots (QDs) is calculated using a surface integral approach. There remains disagreement about the sign of the shear strain piezoelectric coefficient __e__~15~, with m