Large electric-field-induced enhancement of resonant Raman scattering of a single quantum well
β Scribed by Z.C. Yan; E. Goovaerts; C. Van Hoof; J. Genoe; G. Borghst; D. Schoemaker
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 140 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The electronic coupling between a \(\mathrm{In}_{0.21} \mathrm{Ga}_{0.79}\) As single quantum well (SQW) and GaAs barriers is manifested in electroreflectance (ER). The applied electric field was exactly determined by the Franz-Keldysh oscillation of GaAs. ER spectra display an influence of electric
We study the formation of Fano resonance in excitonic states in GaAsΒ±AlAs quantum wells. Our calculation indicates that an electric field applied perpendicularly to the layers modulates the Fano resonance. We have found that for a given excitonic state there exists a field-range for which Fano reson