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Electric field induced coupling of wave functions in a InGaAs single quantum well

✍ Scribed by T. Kita; H. Nakayama; T. Nishino

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
122 KB
Volume
15
Category
Article
ISSN
0749-6036

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✦ Synopsis

The electronic coupling between a (\mathrm{In}{0.21} \mathrm{Ga}{0.79}) As single quantum well (SQW) and GaAs barriers is manifested in electroreflectance (ER). The applied electric field was exactly determined by the Franz-Keldysh oscillation of GaAs. ER spectra display an influence of electric field on optical transition strength. The transition intensity relating to the first electron subband shows a dramatic enhancement at (27 \mathrm{kV} / \mathrm{cm}). The energy states for electrons in the GaAs (/ \mathrm{In}{0.21} \mathrm{Ga}{0.79} \mathrm{As} / \mathrm{GaAs} \mathrm{SQW}) strongly couple with a continuum state via tunneling under the electric field built into this structure.

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