X-ray absorption spectra of Si, SiO and SiOt in the Si K edge region are presented. They reveal a strong influence of the type of silicon bond on the structure of the absorption spectra situated towards high energies of the edge. These spectra show that the SiO oxide cannot be taken as a mixture of
KβX-ray emission spectra of Si and SiO2
✍ Scribed by M. Karras; R. Juslén; G. Graeffe
- Publisher
- Springer
- Year
- 1975
- Tongue
- English
- Weight
- 181 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1432-0630
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