✦ LIBER ✦

Ku-band high-power amplifier MMIC with on-chip gate biasing circuit

✍ Scribed by Noh, Y.S.; Chang, D.P.; Yom, I.B.

Book ID: 118040323
Publisher: The Institution of Electrical Engineers
Year: 2009
Tongue: English
Weight: 287 KB
Volume: 45
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el.2009.0251

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-band MMIC power amplifier with an on-c

X-band MMIC power amplifier with an on-chip temperature-compensation circuit

✍ Yamauchi, K.; Iyama, Y.; Yamaguchi, M.; Ikeda, Y.; Urasaki, S.; Takagi, T. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 175 KB

MMIC power amplifier with on-chip bias c

MMIC power amplifier with on-chip bias current controlling circuit for W-CDMA mobile handset

✍ Noh, Youn S.; Kim, Ji H.; Kim, Joon H.; Park, Chul S. 📂 Article 📅 2002 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 378 KB

Ku-band 20-W gaAs PHEMT high-power ampli

Ku-band 20-W gaAs PHEMT high-power amplifiers using power splitting and combining circuits with asymmetric structure

✍ Yukinobu Tarui; Akira Tsuchiko; Hiromitsu Utsumi; Michiaki Kasahara; Yasushi Ito 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 439 KB

Power splitting and combining circuits with asymmetric structure characterized by unequal linewidths of split lines and a splitting point shifted from the center have been developed. Amplitude and phase splitting characteristics comparable to those of conventional splitting circuits have been achiev

[IEEE 2009 IEEE Radio Frequency Integrat

[IEEE 2009 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) - Boston, MA, USA (2009.06.7-2009.06.9)] 2009 IEEE Radio Frequency Integrated Circuits Symposium - Fully integrated dual-band power amplifiers with on-chip baluns in 65nm CMOS for an 802.11n MIMO WLAN SoC

✍ Afsahi, Ali; Behzad, Arya; Magoon, Vikram; Larson, Lawrence E. 📂 Article 📅 2009 🏛 IEEE ⚖ 317 KB

[IEEE 2012 IEEE/MTT-S International Micr

[IEEE 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012 - Montreal, QC, Canada (2012.06.17-2012.06.22)] 2012 IEEE/MTT-S International Microwave Symposium Digest - High efficiency Ka-band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process

✍ Campbell, Charles F.; Ming-Yih Kao, ; Nayak, Sabyasachi 📂 Article 📅 2012 🏛 IEEE ⚖ 812 KB

[Presses Polytech. Univ. Romandes ISCAS

[Presses Polytech. Univ. Romandes ISCAS 2000 Geneva. 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings - Geneva, Switzerland (28-31 May 2000)] 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353) - A 2 W BTL single-chip class-D power amplifier with very high efficiency for audio applications

✍ Jun-Woo Lee, ; Jae-Shin Lee, ; Gun-Sang Lee, ; Kim, S. 📂 Article 📅 2000 🏛 Presses Polytech. Univ. Romandes ⚖ 401 KB