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Kinetics of light-induced defect creation in amorphous silicon: The constant degradation method

✍ Scribed by Martin S. Brandt; Martin Stutzmann


Book ID
117146971
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
290 KB
Volume
137-138
Category
Article
ISSN
0022-3093

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## Abstract Recombination processes of electrons and holes in hydrogenated amorphous silison (a‐Si:H) are reviewed in terms of our model. The long decay component of photoluminescence (PL) and the long decay of light‐induced electron spin resonance (LESR) are compared, and it is concluded that radi