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Kinetics of Indium Phosphide Epitaxial Growth Using Metal Organic Precursors

✍ Scribed by Dr. M. Masi; C. Cavallotti; G. Radaelli; S. Carrà


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
734 KB
Volume
32
Category
Article
ISSN
0232-1300

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gas was ultrahigh purity (UHP) argon. UHP oxygen, saturated with deionized H 2 O, served as the oxidant. The introduction of H 2 O was necessary to avoid the formation of BaF 2 as an impurity phase. Typical processing conditions for this study are summarized in Table . Table 1. Typical processing co